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SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - FEBRUARY 1999 PARTMARKING DETAILS ZUMT807-25 ZUMT807-40 T8 T24 ZUMT807-25 ZUMT807-40 COMPLEMENTARY TYPES ZUMT807-25 ZUMT807-40 - ZUMT817-25 ZUMT817-40 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB I BM P tot T j:T stg VALUE -50 -45 -5 -1 -500 -100 -200 330 -55 to +150 UNIT V V V A mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -25 -40 Transition Frequency Collector-base Capacitance fT C obo SYMBOL I CBO I EBO V CE(sat) V BE(on) h FE 100 40 160 250 100 8.0 MIN. TYP. MAX. UNIT CONDITIONS. -700 -1.2 600 400 600 mV V MHz pF *Measured under pulsed conditions. Pulse width=300s. Duty cycle -10 -0.1 -5 A A A V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150C V EB=-5V, I C=0 I C=-500mA, I B=-50mA* I C=-500mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-500mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-10mA, V CE=-5V f=35MHz I E=I e=0, V CB=-10V f=1MHz 2% |
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